1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms prepared in a tetrahedral lattice, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing extraordinary atomic bond strength.
The Si– C bond, with a bond energy of roughly 318 kJ/mol, is amongst the greatest in architectural porcelains, conferring exceptional thermal security, hardness, and resistance to chemical attack.
This robust covalent network leads to a product with a melting factor exceeding 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC keeps mechanical stamina and creep resistance at temperature levels above 1400 ° C, where many metals and conventional porcelains start to soften or deteriorate.
Its low coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for rapid thermal biking without tragic splitting, a vital attribute for crucible performance.
These intrinsic residential or commercial properties stem from the well balanced electronegativity and comparable atomic dimensions of silicon and carbon, which promote an extremely stable and largely packed crystal framework.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are generally fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a decisive role in sturdiness and thermal shock resistance.
Sintered SiC crucibles are generated through solid-state or liquid-phase sintering at temperature levels over 2000 ° C, frequently with boron or carbon additives to enhance densification and grain boundary communication.
This procedure generates a fully dense, fine-grained structure with marginal porosity (
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