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Silicon Carbide Ceramic Plates: High-Temperature Structural Materials with Exceptional Thermal, Mechanical, and Environmental Stability aluminum nitride thermal conductivity

1. Crystallography and Product Principles of Silicon Carbide

1.1 Polymorphism and Atomic Bonding in SiC


(Silicon Carbide Ceramic Plates)

Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, identified by its exceptional polymorphism– over 250 known polytypes– all sharing solid directional covalent bonds however varying in stacking series of Si-C bilayers.

The most technologically pertinent polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal kinds 4H-SiC and 6H-SiC, each showing refined variations in bandgap, electron movement, and thermal conductivity that affect their viability for certain applications.

The strength of the Si– C bond, with a bond power of approximately 318 kJ/mol, underpins SiC’s phenomenal solidity (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical deterioration and thermal shock.

In ceramic plates, the polytype is typically picked based on the meant use: 6H-SiC is common in structural applications due to its simplicity of synthesis, while 4H-SiC dominates in high-power electronic devices for its remarkable charge provider movement.

The large bandgap (2.9– 3.3 eV depending on polytype) likewise makes SiC an exceptional electrical insulator in its pure type, though it can be doped to operate as a semiconductor in specialized digital gadgets.

1.2 Microstructure and Phase Pureness in Ceramic Plates

The efficiency of silicon carbide ceramic plates is seriously based on microstructural functions such as grain size, density, stage homogeneity, and the existence of additional stages or contaminations.

High-grade plates are commonly produced from submicron or nanoscale SiC powders through innovative sintering methods, causing fine-grained, totally dense microstructures that optimize mechanical stamina and thermal conductivity.

Impurities such as totally free carbon, silica (SiO â‚‚), or sintering aids like boron or aluminum must be thoroughly controlled, as they can develop intergranular movies that reduce high-temperature toughness and oxidation resistance.

Residual porosity, even at low levels (

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